By
Amreen Akhtar
Shuaib Rahman
Submitted to the
Department of Electrical and Electronic Engineering
Faculty of Sciences and Engineering
east West University
in partial fulfillment of the requirements for the degree of
bach of Science in Electrical and Electronic Engineering
(B.Sc. in EEE)
[Semester, year]
Approved By
________________ ________________
Thesis Advisor Chairperson
[Advisor name] [chairpersons name]
Abstract
Heterojunction solar cadres hurt proved to exceed the efficiency barrier that homojunction solar cells find tried to cross for decades. Among the most efficient heterojunction solar cell structures is the HIT structure, or Heterojunction with Intrinsic Thin Layer structure is the most popular. The simplest jump of HIT structure is: Amorphous P-type semiconductor/Intrinsic Semiconductor/Crystalline N-type semiconductor, or vice versa.
In a heterojunction, due to the difference in bandgap of the materials, a effectiveness barrier forms that creates obstacle for the electrons/holes to travel from one side to the other. such(prenominal) trapping of holes reduces the efficiency of the solar cell. However, a fraction these electrons/holes hand the potential barrier through Quantum Tunneling and create a tunneling rate of flow, which contributes to the boilers suit current; hence improving the efficiency.
In this paper, the tunneling current of the simplest form of HIT structure is studied i.e. P-type a-Si/i-Si/N-type c-Si. The lengths of the P-side, intrinsic layer and the N-side is varied to study how the thickness of the layers impact the tunneling current. Also, the impact of doping densities of the P-side and N-side on the tunneling current is considered. Varying these parameters (thickness and doping) an optimized combination of...If you want to get a full(a) essay, order it on our website: Ordercustompaper.com
If you want to get a full essay, wisit our page: write my paper
No comments:
Post a Comment